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RESEARCH ARTICLE
Contents Vol 67(6)

Alloying Buffer Layers in Colloidal CdSe/ZnS Core/Shell Nanocrystals

Huichao Zhang A , Yonghong Ye B , Boping Yang A , Li Shen A , Yiping Cui A and Jiayu Zhang A C
+ Author Affiliations
- Author Affiliations

A Department of Electronic Engineering, Southeast University, Nanjing 210096, China.

B Department of Physics, Nanjing Normal University, Nanjing 210097, China.

C Corresponding author. Email: jyzhang@seu.edu.cn

Australian Journal of Chemistry 67(6) 844-850 https://doi.org/10.1071/CH13574
Submitted: 23 October 2013  Accepted: 17 January 2014   Published: 19 February 2014

Abstract

When a ZnS shell is coated onto a CdSe core, some non-radiative defects are formed with the relaxation of the strain induced by the large lattice mismatch between CdSe and ZnS even though there are Zn0.5Cd0.5Se or ZnSe buffer layers, as indicated by the decrease of photoluminescent (PL) quantum yield and the reverse evolution of temperature-dependent time-resolved PL decay. X-Ray photoelectron spectroscopy analysis reveals that these defects are induced by the formation of an interfacial alloy during the epitaxy process. These defects could be significantly suppressed if the ZnxCd1–xSeyS1–y alloy buffer layer is artificially introduced.


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