
TY  - JOUR
A1  - Wang, Ke-Ming 
A1  - Shi, Bo-Rong 
A1  - Zhai, Hong-Ying 
A1  - Ma, Shi-Jie 
A1  - Liu, Xiang-Dong 
A1  - Liu, Ji-Tian 
A1  - Liu, Xi-Ju 
T1  - Mobility of Hg<sup>+</sup> and Br<sup>+</sup> Implanted in Quartz
JF  - Australian Journal of Physics
JO  - Aust. J.  Phys.
Y1  - 1996
VL  - 49
IS  - 3
SP  - 705
EP  - 712
KW  - 
UR  - https://doi.org/10.1071/PH960705 
N2  - Both Hg+ and Br+ were implanted in quartz (Si02) 7 years ago. The mobilities of the implanted Hg+ and Br+ at room and higher temperatures are investigated by Rutherford backscattering of 2·1 MeV He2+ ions. The results show that both Hg+ and Br+ are still immobile at room temperature after 7 years. The depth distributions of Hg+ agree well with those calculated by the transport of ions in matter program (TRIM'90). However, for the case of Br+ the mean projected range is shallower than the TRIM'90 prediction with increasing implantation energy. It is found that 300 keV Hg+ and 250 keV Br+ are mobile after 6000&#176;C and 5000&#176;C annealing respectively. Both diffusion and evaporation during annealing are observed. 
ER  -

