
TY  - JOUR
A1  - Butcher, KSA 
A1  - Alexiev, D 
A1  - Tansley, TL 
T1  - Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs
JF  - Australian Journal of Physics
JO  - Aust. J.  Phys.
Y1  - 1993
VL  - 46
IS  - 2
SP  - 317
EP  - 326
KW  - 
UR  - https://doi.org/10.1071/PH930317 
N2  - Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported. 
ER  -

