
TY  - JOUR
A1  - Nanchang, Zhu 
A1  - W Stevenson, Andrew 
A1  - Runshen, Li 
T1  - Determination of the Unit Cell for an Epitaxial Layer of Hg1-xCdxTe Deposited on GaAs
JF  - Australian Journal of Physics
JO  - Aust. J.  Phys.
Y1  - 1992
VL  - 45
IS  - 6
SP  - 773
EP  - 780
KW  - 
UR  - https://doi.org/10.1071/PH920773 
N2  - Stevenson et al. (1991) reported structural aspects of six metal organic chemical vapour deposition (MOCVD)-grown Hg1-xCdxTe epitaxial layers on novel GaAs substrates. Large layer miscuts (the angle between the surface and the Bragg planes of the nominal rientation) of 4·3° were reported for the samples of (311) and (3II) orientation, whereas the substrate miscuts were less than 1° (0·94° and 0·84° respectively). 
ER  -

