
%0 Journal Article
%A Ladbrooke, PH 
%A Debuf, DR 
%A Nanayakkara, K 
%A Wilkins, DR 
%T Gallium Arsenide as a Competitor to Silicon for High-speed Amplification and Switching
%J Australian Journal of Physics
%D 1982/12/01
%V 35
%N 6
%P 749-760
%K 
%R https://doi.org/10.1071/PH820749
%U https://www.publish.csiro.au/paper/PH820749 
%X A review is given of the physical and technological factors which affect the electrical behaviour of field-effect devices for high-speed applications. Ballistic electron transport is shown to lead to an electron transit time under the gate electrode which is shorter in GaAs than in Si field-effect transistors (FETs), providing a possible basis for exploitation of transport effects in high-speed devices. Some electrical characteristics of practical Si and GaAs field-effect structures are presented. 
