
TY  - JOUR
A1  - Trodahl, HJ 
T1  - Far Infrared Absorption by Tetrahedrally Bonded Amorphous Semiconductors
JF  - Australian Journal of Physics
JO  - Aust. J.  Phys.
Y1  - 1979
VL  - 32
IS  - 6
SP  - 663
EP  - 670
KW  - 
UR  - https://doi.org/10.1071/PH790663 
N2  - A discussion of the electronic structure of amorphous semiconductors is given and the ideas are developed for the case of the tetrahedrally bonded elements silicon and germanium. This background is used to interpret far infrared conductivity data taken in our laboratory. The results suggest that the void structure in these materials plays a central role in the photon-vibration coupling, particularly at low frequencies. 
ER  -

