
TY  - JOUR
A1  - Malhotra, KC 
T1  - Cryoscopic and conductance studies of some silicon compounds in disulphuric acid
JF  - Australian Journal of Chemistry
JO  - Aust. J. Chem.
Y1  - 1976
VL  - 29
IS  - 6
SP  - 1185
EP  - 1190
KW  - 
UR  - https://doi.org/10.1071/CH9761185 
N2  - Silicon tetrachloride, silicon tetraethoxide and silicon tetraacetate are immiscible with disulphuric acid and there is no interaction between them. Hexamethyldisilane, ethoxytrimethylsilane, ethoxy.triethylsilane and trimethylsilanol form trimethylsilicon hydrogensulphate while triethylmethylsilane forms methyltris(hydrogensu1phate)silane when dissolved in disulphuric acid. Diethoxydimethylsilane forms dimethylsilicon hydrogensulphate while triethoxymethylsilane forms methyl silicon trihydrogensulphate. The solvolysed products have a tendency to form linear or cyclic polymers.Tetraphenylsilicon forms Si [OSi(HS04)3]4 in disulphuric acid; this also has a tendency to polymerize in solution. None of these compounds has a tendency to form H2 [Si(HSO4)6] in disulphuric acid. 
ER  -

