Determination of the Unit Cell for an Epitaxial Layer of Hg1-xCdxTe Deposited on GaAs
Zhu Nanchang, Andrew W Stevenson and Li Runshen
Australian Journal of Physics
45(6) 773 - 780
Published: 1992
Abstract
Stevenson et al. (1991) reported structural aspects of six metal organic chemical vapour deposition (MOCVD)-grown Hg1-xCdxTe epitaxial layers on novel GaAs substrates. Large layer miscuts (the angle between the surface and the Bragg planes of the nominal rientation) of 4·3° were reported for the samples of (311) and (3II) orientation, whereas the substrate miscuts were less than 1° (0·94° and 0·84° respectively).https://doi.org/10.1071/PH920773
© CSIRO 1992
