The Effect of Sintering Temperature on the Barrier Height of p-type PtSi Schottky Diodes
Vincent WL Chin, Stephen M Newbery, John WV Storey and Ulrich Theden
Australian Journal of Physics
44(1) 67 - 72
Published: 1991
Abstract
The effect of sintering temperature on the barrier height of p-type PtSi Schottky diodes is studied by electrical and infrared photoresponse methods. It is revealed that there is a consistent difference of about 0·06 eV for two samples sintered at different temperatures.https://doi.org/10.1071/PH910067
© CSIRO 1991
