Cryoscopic and conductance studies of some silicon compounds in disulphuric acid

Abstract

Silicon tetrachloride, silicon tetraethoxide and silicon tetraacetate are immiscible with disulphuric acid and there is no interaction between them. Hexamethyldisilane, ethoxytrimethylsilane, ethoxy.triethylsilane and trimethylsilanol form trimethylsilicon hydrogensulphate while triethylmethylsilane forms methyltris(hydrogensu1phate)silane when dissolved in disulphuric acid. Diethoxydimethylsilane forms dimethylsilicon hydrogensulphate while triethoxymethylsilane forms methyl silicon trihydrogensulphate. The solvolysed products have a tendency to form linear or cyclic polymers.Tetraphenylsilicon forms Si [OSi(HS0₄)₃]₄ in disulphuric acid; this also has a tendency to polymerize in solution. None of these compounds has a tendency to form H₂ [Si(HSO₄)₆] in disulphuric acid.