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RESEARCH ARTICLE
Contents Vol 64(12)

Surface-Enhanced Raman Scattering of the Bariandite Oxide Layer on a Vanadium Dioxide Crystal

Ian S. Butler A and James K. Beattie B C
+ Author Affiliations
- Author Affiliations

A Department of Chemistry, McGill University, 801 Sherbrooke West, Montreal, Quebec H3A 2K6, Canada.

B School of Chemistry, University of Sydney, Sydney, NSW 2006, Australia.

C Corresponding author. Email: james.beattie@sydney.edu.au

Australian Journal of Chemistry 64(12) 1621-1623 https://doi.org/10.1071/CH11180
Submitted: 4 May 2011  Accepted: 18 October 2011   Published: 23 November 2011

Abstract

Variable-temperature (25–100°C) Raman spectra of a crystal of commercial VO2 have revealed surface-enhanced Raman scattering (SERS) of the V=O stretching mode of the bariandite-like vanadium oxide species, V10O24·9H2O, that is formed on the surface of the crystal. Upon passing through the semiconductor-to-metal phase transition of VO2 at 68°C, there is an approximately three to five-fold increase in Raman intensity of the V=O stretching mode. This effect is reversible with hysteresis upon decreasing the temperature. The temperature dependence of the Raman spectra at temperatures below the transition suggest that even the semiconductor phase has some SERS effect.


References

[1]  L. Whittaker, C. J. Patridge, S. Banerjee, J. Phys. Chem. Lett. 2011, 2, 745.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DC%2BC3MXjtVKiur0%3D&md5=1164d315b8a2eb6f0ed5ce9fefdc5b57CAS |

[2]  M. Gurvitch, S. Luryi, A. Polyakov, A. Shabalov, M. Dudley, G. Wang, S. Ge, V. Yakovlev, J. Appl. Phys. 2007, 102, 033504.
         | Crossref | GoogleScholarGoogle Scholar |

[3]  M. Pan, J. Liu, H. Zhong, S. Wang, Z.-f. Li, X. Chen, W. Lu, J. Cryst. Growth 2004, 268, 178.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DC%2BD2cXltF2mtbo%3D&md5=8a54a040c55d1feff6ab627c5ff915e1CAS |

[4]  J. C. Parker, Phys. Rev. B 1990, 42, 3164.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DyaK3cXls1WntL8%3D&md5=2bbe9f2c4cfaaae95245bc91452ac7a0CAS |

[5]  M. Occhiuzzi, D. Cordischi, R. Dragone, J. Solid State Chem. 2005, 178, 1551.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DC%2BD2MXjvV2gtr4%3D&md5=9deaef433f9383f80e33427b12f56064CAS |

[6]  R. Srivastava, L. L. Chase, Phys. Rev. Lett. 1971, 27, 727.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DyaE3MXltlGgtbc%3D&md5=a0e5c1d64daf62a2b51e9ec3091d5434CAS |

[7]  P. Schilbe, Physica B 2002, 316–317, 600.
         | Crossref | GoogleScholarGoogle Scholar |

[8]  A. C. Jones, S. Berweger, J. Wei, D. Cobden, M. B. Raschke, Nano Lett. 2010, 10, 1574.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DC%2BC3cXksVKluro%3D&md5=2eb6b4afe42ab7e4ab0d90cb4fac058bCAS |

[9]  W. G. Menezes, D. M. Reis, M. M. Oliveira, J. F. Soares, A. J. G. Zarbin, Chem. Phys. Lett. 2007, 445, 293.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DC%2BD2sXhtVWjtL7N&md5=bcaaf3273fc8737b2140aed5a520846bCAS |

[10]  W. G. Menezes, D. M. Reis, T. M. Benedetti, M. M. Oliveira, J. F. Soares, R. M. Torresi, A. J. G. Zarbin, J. Colloid Interface Sci. 2009, 337, 586.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DC%2BD1MXovFOmurY%3D&md5=2990d1930b108d66033d8123efb26e2dCAS |

[11]  J. M. Booth, P. S. Casey, ACS Appl. Mater. Interfaces 2009, 1, 1899.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DC%2BD1MXhtV2mtbrE&md5=2781544c744a7300375d5351063296caCAS |

[12]  E. U. Donev, J. I. Ziegler, R. F. Haglund Jr, L. C. Feldman, J. Opt. A: Pure Appl. Opt. 2009, 11, 125002.
         | Crossref | GoogleScholarGoogle Scholar |

[13]  S. Xie, E. Iglesia, A. T. Bell, J. Phys. Chem. B 2001, 105, 5144.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DC%2BD3MXjtlyqtbs%3D&md5=0e303baa00bf433e13d27a24c89fd17aCAS |

[14]  L. G. Quagliano, J. Am. Chem. Soc. 2004, 126, 7393.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DC%2BD2cXktVSls7o%3D&md5=8b59621958589ea947ad0e78ec962b9aCAS |

[15]  R. Livingstone, X. Zhou, M. C. Tamargo, J. R. Lombardi, L. G. Quagliano, F. Jean-Mary, J. Phys. Chem. C 2010, 114, 17460.
         | Crossref | GoogleScholarGoogle Scholar | 1:CAS:528:DC%2BC3cXht1ahurnM&md5=952619947310d327ad99f8ef39529673CAS |

[16]  P. Tarakeshwar, D. Finkelstein-Shapiro, S. J. Hurst, T. Rajh, V. Mujica, J. Phys. Chem. C. 2011, 115, 8994.
         | 1:CAS:528:DC%2BC3MXks1Gkuro%3D&md5=1c2c6eb57545032ec1c23a35f76c77d8CAS |