Temperature-controlled Deposition of Copper(i) Oxide and Metallic Copper Nanostructures from Single-source Molecular Precursor

Muhammad Shahid; Muhammad Mazhar; Asif Ali Tahir; Muhammad Khawar Rauf; James Raftery

doi:10.1071/CH13472

RESEARCH ARTICLE

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Temperature-controlled Deposition of Copper(i) Oxide and Metallic Copper Nanostructures from Single-source Molecular Precursor

Muhammad Shahid ^A ^E , Muhammad Mazhar ^B ^E , Asif Ali Tahir ^C , Muhammad Khawar Rauf ^A and James Raftery ^D

+ Author Affiliations

- Author Affiliations

^A Department of Chemistry, Quaid-I-Azam University, Islamabad 45320, Pakistan.

^B Department of Chemistry, University of Malaya, 50603 Kuala Lumpur, Malaysia.

^C CEMPS – College of Engineering, Mathematics and Physical Science, Renewable Energy Research Group, University of Exeter, Cornwall Campus, Penryn TR10 9EZ, UK.

^D The School of Chemistry and School of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.

^E Corresponding authors. Email: shahid_chme@yahoo.com; mazhar42pk@yahoo.com

Australian Journal of Chemistry 67(5) 757-762 https://doi.org/10.1071/CH13472
Submitted: 20 September 2013 Accepted: 17 December 2013 Published: 13 February 2014

Abstract

A simple method of depositing morphology- and phase-tailored thin films of copper(i) oxide and metallic copper from [Cu(dmae)(TFA)]₄·CH₂Cl₂ (1), where dmae is N,N-dimethylaminoethanolato and TFA is trifluoroacetato, on glass substrates by aerosol-assisted chemical vapour deposition is demonstrated. The tetrameric precursor 1 was synthesized and its structure was determined by single-crystal X-ray crystallography. Precursor 1 was applied for the deposition of nanostructured thin films of copper(i) oxide and copper nanowires at 250 and 375°C respectively. The deposited thin films were characterized by powder X-ray diffraction, field emission scanning electron microscopy, energy-dispersive X-ray diffraction, and ultraviolet–visible spectroscopy. The results indicate that the phase and morphology of the deposited material are strongly dependent on deposition temperature. UV-vis studies reveal that copper(i) oxide films with a band gap of 2.48 eV may find possible applications in tandem photoelectrochemical devices as light-absorbing material.

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Temperature-controlled Deposition of Copper(i) Oxide and Metallic Copper Nanostructures from Single-source Molecular Precursor

Abstract

References

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